tsm 15n03pq 33 30v n-channel power mosfet 1/6 version: b14 pdfn33 key parameter performance parameter value unit v ds 30 v r ds(on) (max) v gs = 10v 12 m ? v gs = 4.5v 17 q g 3.6 nc features advanced trench technology low on-resistance block diagram n-channel mosfet ordering information part no. package packing TSM15N03PQ33 rgg pdfn33 5kpcs / 13 reel note: g denotes for halogen- and antimony-free as thos e which contain <900ppm bromine, <900ppm chlorine (<1500ppm total b r + cl) and <1000ppm antimony compounds. absolute maximum ratings (t a =25 o c unless otherwise noted) parameter symbol limit unit drain-source voltage v ds 30 v gate-source voltage v gs 20 v continuous drain current (note 3) t c =25c i d 14 a t c =70c 14 t a =25c 9.7 t a =70c 7.8 drain current-pulsed (note 1) i dm 35 a avalanche current, l=0.1mh i as 9 a avalanche energy, l=0.1mh e as 4 mj maximum power dissipation t c =25c p d 15.6 w t c =70c 10 t a =25c 3.2 t a =70c 2.1 storage temperature range t stg -55 to +150 c operating junction temperature range t j -55 to +150 c thermal performance parameter symbol limit unit thermal resistance - junction to case r ? jc 8 o c/w thermal resistance - junction to ambient r ? ja 39 o c/w notes: surface mounted on fr4 board t 10sec pin definition : 1. source 8. drain 2. source 7. drain 3. source 6. drain 4. gate 5. drain
tsm 15n03pq 33 30v n-channel power mosfet 2/6 version: b14 electrical specifications (t j =25 o c unless otherwise noted) parameter conditions symbol min typ max unit static drain-source breakdown voltage v gs = 0v, i d = 250a bv dss 30 -- -- v drain-source on-state resistance v gs = 10v, i d = 7a r ds(on) -- 9 12 m ? v gs = 4.5v, i d = 6a -- 13 17 gate threshold voltage v ds = v gs , i d = 250a v gs(th) 1.2 -- 2.5 v zero gate voltage drain current v ds = 30v, v gs = 0v i dss -- -- 1 a gate body leakage v gs = 20v, v ds = 0v i gss -- -- 100 na dynamic total gate charge v ds = 15v, i d = 7.8a, v gs = 4.5v q g -- 3.6 -- nc gate-source charge q gs -- 1.2 -- gate-drain charge q gd -- 1 -- input capacitance v ds = 15v, v gs = 0v, f = 1.0mhz c iss -- 415 -- pf output capacitance c oss -- 90 -- reverse transfer capacitance c rss -- 38 -- switching turn-on delay time v gs = 4.5v, v ds = 15v, i d = 6.3a, r g = 1 ? t d(on) -- 13 -- ns turn-on rise time t r -- 10 -- turn-off delay time t d(off) -- 11 -- turn-off fall time t f -- 8 -- drain-source diode characteristics and maximum rati ng drain-source diode forward voltage v gs =0v, i s =7.8a v sd -- 0.8 1.3 v reverse recovery time i s = 7.8a, t j =25 o c di/dt = 100a/s t fr -- 15 -- ns reverse recovery charge q fr -- 7 -- nc notes: 1. pulse test: pulse width 300 s, duty cycle 2%. 2. r ? ja is the sum of the junction-to-case and case-to-amb ient thermal resistances. the case thermal referenc e is defined at the solder mounting surface of the dr ain pins. r ? ja is guaranteed by design while r ? ca is determined by the users board design. r ? ja shown below for single device operation on fr-4 pc b in still air. 3. the maximum current rating is limited by package .
tsm 15n03pq 33 30v n-channel power mosfet 3/6 version: b14 electrical characteristics curves output characteristics gate threshold voltage gate source on resistance drain-source on resistance drain-source on-resistance source-drain diode forward voltage i ds =250 a
tsm 15n03pq 33 30v n-channel power mosfet 4/6 version: b14 electrical characteristics curves power derating drain current vs. junction temperature safe operation area transient thermal impedance capacitance gate charge
tsm 15n03pq 33 30v n-channel power mosfet 5/6 version: b14 pdfn33 mechanical drawing unit: millimeters marking diagram y = year code m = month code for halogen free product ( o =jan, p =feb, q =mar, r =apl, s =may, t =jun, u =jul, v =aug, w =sep, x =oct, y =nov, z =dec) l = lot code
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